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1

The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties

W.S. Kuhn, A. Lusson, B. Qu'Hen, C. Grattepain, H. Dumont, O. Gorochov, S. Bauer, K. Wolf, M. Wörz, T. Reisinger, A. Rosenauer, H.P. Wagner, H. Stanzl, W. Gebhardt

Journal:

Progress in Crystal Growth and Characterization of Materials

Year:

1995

Language:

english

File:

PDF, 2.70 MB

english, 1995

2

Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

J.E. Bourée, J. Guillet, C. Grattepain, J. Chaumont

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 318 KB

english, 2003

3

As

Chevallier, J., Machayekhi, B., Grattepain, C. M., Rahbi, R., Theys, B.

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 180 KB

english, 1992

4

Hydrogen Diffusion in Boron Doped Diamond: Evidence of Hydrogen-Boron Interactions

Chevallier, J., Theys, B., Grattepain, C., Deneuville, A., Gheeraert, E.

Journal:

MRS Proceedings

Year:

1998

Language:

english

File:

PDF, 375 KB

english, 1998

5

Crystal Defect Study in III-V Compound Technology

Huber, A.M., Grattepain, C.

Journal:

Materials Science Forum

Year:

1989

File:

PDF, 395 KB

1989

6

Low temperature growth of (Cd,Hg) Te layers by MOVPE

F. Desjonquères, A. Tromson-Carli, P. Cheuvart, R. Druilhe, C. Grattepain, A. Katty, Y. Marfaing, R. Triboulet, D. Lorans

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 472 KB

english, 1991

7

Indium doping of CdTe layers and CdTe/Cd1 − xZnxTe microstructures

F. Bassani, K. Saminadayar, S. Tatarenko, K. Kheng, R.T. Cox, N. Magnea, C. Grattepain

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 373 KB

english, 1992

8

Investigation of hydrogen, carbon and further impurities in the metalorganic vapour phase epitaxy of ZnSe with ditertiarybutylselenide and methylallylselenide

W.S. Kuhn, R. Driad, H. Stanzl, A. Lusson, K. Wolf, B. Qu'Hen, H. Sahin, L. Svob, C. Grattepain, X. Quesada, W. Gebhardt, O. Gorochov

Journal:

Journal of Crystal Growth

Year:

1994

Language:

english

File:

PDF, 499 KB

english, 1994

9

Temperature dependence of GaAs chemical etching using AsCl3

J.M. Ortion, Y. Cordier, J.Ch. Garcia, C. Grattepain

Journal:

Journal of Crystal Growth

Year:

1996

Language:

english

File:

PDF, 429 KB

english, 1996

10

Low-temperature diffusion of lithium in CdTe

L. Svob, C. Grattepain

Journal:

Journal of Solid State Chemistry

Year:

1977

Language:

english

File:

PDF, 525 KB

english, 1977

11

Secondary ion mass spectrometry of dopants and impurities in compound semiconductors: Depth profiling of homo- and heterostructure

C. Grattepain, A.M. Huber

Journal:

Applied Surface Science

Year:

1991

Language:

english

File:

PDF, 814 KB

english, 1991

12

Optical studies of the transition from 3D to 2D properties for excitons in CdTeCd1−xZnxTe quantum wells

H. Tuffigo, R.T. Cox, F. Dal'Bo, G. Lentz, N. Magnéa, H. Mariette, C. Grattepain

Journal:

Superlattices and Microstructures

Year:

1989

Language:

english

File:

PDF, 293 KB

english, 1989

13

Modeling of hydrogen diffusion in p-type GaAs:Zn

R. Rahbi, D. Mathiot, J. Chevallier, C. Grattepain, M. Razeghi

Journal:

Physica B: Condensed Matter

Year:

1991

Language:

english

File:

PDF, 363 KB

english, 1991

14

Hydrogen neutralization of dopant in p-type Ga0.47In0.53As

B. Theys, A. Jalil, J. Chevallier, A.M. Huber, C. Grattepain, P. Hirtz, B. Pajot

Journal:

Physica B: Condensed Matter

Year:

1991

Language:

english

File:

PDF, 312 KB

english, 1991

15

Donor activation efficiency and doping profile quality in In-doped CdTe and CdZnTe quantum structures

F. Bassani, S. Tatarenko, K. Saminadayar, C. Grattepain

Journal:

Materials Science and Engineering: B

Year:

1993

Language:

english

File:

PDF, 294 KB

english, 1993

16

Study of copper substitutions in Ag(NbxTa1−x)O3 solid solutions

Sonia Duguey, Richard Lebourgeois, Claude Grattepain, Jean-Marc Heintz, Jean-Pierre Ganne

Journal:

Journal of the European Ceramic Society

Year:

2007

Language:

english

File:

PDF, 715 KB

english, 2007

17

Impurity incorporation during epitaxial growth of GaAs by chemical reaction

M Gandouzi, J.C Bourgoin, J Mimila-Arroyo, Cl Grattepain, Ch Grattepain

Journal:

Journal of Crystal Growth

Year:

2000

Language:

english

File:

PDF, 151 KB

english, 2000

18

In situ etching at InGaAs/GaAs quantum well interfaces

E Chirlias, J Massies, X Marcadet, J.L Guyaux, C Grattepain

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 143 KB

english, 2001

19

Influence of a ZnMnTe buffer layer on the growth of ZnTe on (0 0 1)GaAs by MOVPE

A Zozime, M Seibt, J Ertel, A Tromson-Carli, R Druilhe, C Grattepain, R Triboulet

Journal:

Journal of Crystal Growth

Year:

2003

Language:

english

File:

PDF, 603 KB

english, 2003

20

Influence of a ZnMnTe nucleation layer on the structural quality of (111) ZnTe grown by MOVPE on (100) GaAs

A. Tromson-Carli, A. Zozime, J. Ertel, M. Seibt, R. Druilhe, C. Grattepain, R. Triboulet

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

21

n- And p-type modulation doping of Te related semimagnetic II–VI heterostructures

A Arnoult, D Ferrand, V Huard, J Cibert, C Grattepain, K Saminadayar, C Bourgognon, A Wasiela, S Tatarenko

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 110 KB

english, 1999

22

PBII processing of dielectric layers: physical aspects limitations and experimental results

A Lacoste, F Le Cœur, Y Arnal, J Pelletier, C Grattepain

Journal:

Surface and Coatings Technology

Year:

2001

Language:

english

File:

PDF, 171 KB

english, 2001

23

Hydrogen-related effects in GaInP/GaAs HBTs: incorporation, removal and influence on device reliability

S. Cassette, S.L. Delage, E. Chartier, D. Floriot, M.A. Poisson, J.C. Garcia, C. Grattepain, J. Mimila Arroyo, R. Plana, S.W. Bland

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 361 KB

english, 2001

24

Carrier capture in InGaN quantum wells and hot carrier effects in GaN

F. Binet, J.Y. Duboz, C. Grattepain, F. Scholz, J. Off

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 402 KB

english, 1999

25

Chemical beam epitaxy of GaN on (0001) sapphire substrate

M. Kappers, J.-L. Guyaux, J. Olivier, R. Bisaro, C. Grattepain, J.-C. Garcia

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 341 KB

english, 1999

26

New methods for the characterization of surface states density and substrate/epilayer interface states in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Vincent Mosser, Olivier Callen, Farah Kobbi, Didier Adam, Claude Grattepain, Nasser Draidia

Journal:

Materials Science and Engineering: B

Year:

1999

Language:

english

File:

PDF, 177 KB

english, 1999

27

Yttrium diffusion in α-alumina single crystal

E.G. Moya, F. Moya, B. Lesage, M.K. Loudjani, C. Grattepain

Journal:

Journal of the European Ceramic Society

Year:

1998

Language:

english

File:

PDF, 462 KB

english, 1998

28

Silver-palladium submicronic powders

F. Yala, E. Delarue, M. O. Delcourt, C. Haut, C. Severac, C. Grattepain

Journal:

Journal of Materials Science

Year:

1995

Language:

english

File:

PDF, 892 KB

english, 1995

29

Sims analysis of the distribution of hydrogen absorbed by gold electrodes during the evolution of hydrogen

F. Chao, M. Costa, R. Parsons, C. Grattepain

Journal:

Journal of Electroanalytical Chemistry and Interfacial Electrochemistry

Year:

1980

Language:

english

File:

PDF, 1.50 MB

english, 1980

30

Erratum to ‘‘Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD’’: [Thin Solid Films 430 (2003) 110–115]

J.E. Bourée, J. Guillet, C. Grattepain, J. Chaumont

Journal:

Thin Solid Films

Year:

2003

Language:

english

File:

PDF, 41 KB

english, 2003

31

Twin-free CdHgTe layers grown by MOCVD on vicinal (211) GaAs surfaces

A. Tromson-Carli, A. Girard-François, R. Druilhe, C. Grattepain, R. Triboulet

Journal:

Materials Letters

Year:

1995

Language:

english

File:

PDF, 542 KB

english, 1995

32

Novel modulated flow technique for the OMCVD growth of CdHgTe at 300°C

V. Sallet, R. Druilhe, A. Tromson-Carli, A. Lusson, M. Rommeluere, C. Grattepain, Y. Marfaing, R. Triboulet

Journal:

Materials Letters

Year:

1994

Language:

english

File:

PDF, 568 KB

english, 1994

33

-type diamond

Chevallier, J., Theys, B., Lusson, A., Grattepain, C., Deneuville, A., Gheeraert, E.

Journal:

Physical Review B

Year:

1998

Language:

english

File:

PDF, 72 KB

english, 1998

34

SIMS study of copper diffusion into bulk alumina

Moya, F., Moya, E.G., Juvé, D., Tréheux, D., Grattepain, C., Aucouturier, M.

Journal:

Scripta Metallurgica et Materialia

Year:

1993

Language:

english

File:

PDF, 340 KB

english, 1993

35

[IEEE 7th Conference on Semi-insulating III-V Materials, - Ixtapa, Mexico (21-24 April 1992)] Proceedings of the 7th Conference on Semi-insulating III-V Materials, - Fe doped semi-insulating indium phosphide substrate characterization for device applications

Grattepain, C., Huber, A.M.

Year:

1992

Language:

english

File:

PDF, 389 KB

english, 1992

36

[IEEE 1993 (5th) International Conference on Indium Phosphide and Related Materials - Paris, France (19-22 April 1993)] 1993 (5th) International Conference on Indium Phosphide and Related Materials - Crystal quality problems of epitaxial layer growth on indium phosphide

Huber, A.M., Grattepain, C.

Year:

1993

Language:

english

File:

PDF, 564 KB

english, 1993

37

Hydrogenation of InAs on GaAs heterostructures

B. Theys, A. Lusson, J. Chevallier, C. Grattepain, S. Kalem, M. Stutzmann

Year:

1991

Language:

english

File:

PDF, 936 KB

english, 1991

38

[IEEE Compound Semiconductors 1997. IEEE Twenty-Fourth International Symposium on Compound Semiconductors - San Diego, CA, USA (8-11 Sept. 1997)] Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors - Growth and characterization of thick epitaxial GaAs layers

Samic, H., Bourgoin, J.C., Pajot, B., Bisaro, R., Grattepain, C., Khirouni, K., Putero, M., Burle, N.

Year:

1998

Language:

english

File:

PDF, 222 KB

english, 1998

39

Diffusion of chromium in alumina single crystals

Moya, E. G., Moya, F., Sami, A., Juvé, D., Tréheux, D., Grattepain, C.

Journal:

Philosophical Magazine A

Year:

1995

Language:

english

File:

PDF, 562 KB

english, 1995

40

Defect-related Si diffusion in GaAs on Si

Freundlich, A., Leycuras, A., Grenet, J. C., Grattepain, C.

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 595 KB

english, 1988

41

Li doping of GaAlAs

Zazoui, M., Feng, S. L., Bourgoin, J. C., Powell, A. L., Rockett, P. I., Grattepain, C., Friant, A.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 594 KB

english, 1992

42

Indium doping of CdTe and Cd1−xZnxTe by molecular-beam epitaxy: Uniformly and planar-doped layers, quantum wells, and superlattices

Bassani, F., Tatarenko, S., Saminadayar, K., Magnea, N., Cox, R. T., Tardot, A., Grattepain, C.

Journal:

Journal of Applied Physics

Year:

1992

Language:

english

File:

PDF, 1.92 MB

english, 1992

43

Hydrogen neutralization of acceptors in highly doped GaInAs:Zn

Jalil, A., Theys, B., Chevallier, J., Huber, A. M., Grattepain, C., Hirtz, P., Pajot, B.

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 575 KB

english, 1990

44

AlxGa1−xAs/GaAs quantum well structures grown by metalorganic molecular beam epitaxy using dimethylethylamine alane

Courboulès, B., Deparis, C., Massies, J., Leroux, M., Grattepain, C.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 603 KB

english, 1994

45

Mg doping of GaInP grown by chemical beam epitaxy using bis-cyclopentadienyl magnesium

Courmont, S., Maurel, Ph., Grattepain, C., Garcia, J. Ch.

Journal:

Applied Physics Letters

Year:

1994

Language:

english

File:

PDF, 437 KB

english, 1994

46

[IEEE CLEO/Europe Conference on Lasers and Electro-Optics - Glasgow, Scotland (14-18 September 1998)] CLEO/Europe Conference on Lasers and Electro-Optics - Ti-Diffusion in Sapphire for Active and Passive Waveguide Devices

Hickey, L.M.B., Quigley, G.R., Wilkinson, J.S., Moya, E.G., Moya, F., Grattepain, C.

Year:

1998

Language:

english

File:

PDF, 103 KB

english, 1998

47

[IEEE Third International Conference Indium Phosphide and Related Materials - Cardiff, UK (8-11 April 1991)] [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials - InP/insulator interface properties: a comparison between UVCVD, DECR PECVD and 13.56 MHz PECVD

Proust, N., Petitjean, M., Cassette, S., Huber, A., Grattepain, C., Plais, F., Agius, B., Perrin, J.

Year:

1991

Language:

english

File:

PDF, 218 KB

english, 1991

48

Magnetic freeze-out study of the DX-linked shallow level in Si-doped Al x Ga 1-x As under hydrostatic pressure

Kadri, A, Ranz, E, Zitouni, K, Saidi, N, Portal, J C, Lavielle, D, Sirvin, R, Grattepain, C, Chand, N

Journal:

Semiconductor Science and Technology

Year:

1991

Language:

english

File:

PDF, 233 KB

english, 1991

49

In-Situ Cleaning of S i O 2 -Patterned GaAs Surface with Trisdimethylaminoarsine for Selective Regrowth

Ortion, Jean Michel, Cordier, Yvon, Garcia, Jean Charles, Adam, Didier, Grattepain, Claude

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 1.10 MB

1996

50

Hydrogen in InAs on GaAs Heterostructures: Diffusion Behavior, Electrical and Optical Effects

Theys, B., Kalem, S., Lusson, A., Chevallier, Jacques, Grattepain, C., Stutzmann, M.

Journal:

Materials Science Forum

Year:

1992

File:

PDF, 338 KB

1992

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